The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, reflecting a compound annual growth rate (CAGR) of 5.20% from 2020 to 2032. In 2019, North America led the market with a 35.89% share.
The gallium nitride (GaN) device market is experiencing robust growth due to the increasing demand for high-performance semiconductor solutions in industries such as telecommunications, consumer electronics, automotive, and renewable energy. GaN devices offer superior efficiency, high power density, and fast switching capabilities compared to traditional silicon-based semiconductors, making them ideal for applications like power electronics, RF devices, and LED lighting. The market's expansion is driven by the rise in electric vehicle adoption, renewable energy projects, and advancements in 5G technology, all of which require efficient power conversion and management. North America holds a significant share of the market, owing to technological innovations and the presence of key players in the region. As demand for energy-efficient and compact devices continues to rise, the GaN device market is expected to witness steady growth, with ongoing advancements in material science and manufacturing processes enhancing the performance and affordability of GaN-based products.
A list of all the prominent gallium nitride device manufacturers present in the global market:
Cree, Inc. (The U.S.)
Infineon Technologies AG (Germany)
Efficient Power Conversion Corporation. (The U.S.)
EPISTAR Corporation (Taiwan)
GaN Systems (Canada)
MACOM (The U.S.)
Microsemi (The U.S.)
Mitsubishi Electric Corporation (Japan)
NICHIA CORPORATION (Japan)
Northrop Grumman Corporation (The U.S.)
NXP Semiconductors. (Netherland)
Qorvo, Inc (The U.S.)
Texas Instruments Incorporated. (The U.S.)
Toshiba Corporation (Japan)
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Drivers & Restraints- Gallium Nitride Device Market
Expansion of Telecommunications Domain to Accelerate Growth
The demand for energy efficient GaN devices is surging rapidly owing to the expansion of the telecommunications domain. Most of the internet service providers are nowadays focusing on providing lower latency with optical cable wires, ubiquitous connectivity, and network with higher capacity. Apart from that, the rising utilization of GaN devices in the 5G infrastructure is likely to propel the gallium nitride device market growth in the near future. However, the high cost associated with the maintenance and development of gallium nitride devices may hinder growth.
Segmentation Of Gallium Nitride Device Market
The Gallium Nitride (GaN) device market is segmented based on device type, application, and region. By device type, the market includes GaN power devices and GaN RF devices, catering to diverse applications such as power electronics and radio frequency systems. Application-wise, the market covers consumer electronics, automotive, industrial, and telecommunications sectors, among others, highlighting the versatility and growing adoption of GaN technology across various industries. Regionally, the market is analyzed across North America, Europe, Asia-Pacific, and the Rest of the World, with each region exhibiting unique growth patterns and opportunities driven by technological advancements and increasing demand for efficient power solutions.
Regional Insights-
High Demand for Wireless Devices to Favor Growth in Europe
Geographically, North America generated USD 7.38 billion in 2019 because of the presence of numerous prominent manufacturers, such as MACOM, Cree, Inc., Northrop Grumman Corporation, Efficient Power Conversion Corporation, Microsemi, and others in this region.
Europe, on the other hand, is anticipated to grow significantly on account of the rising demand for wireless devices in Germany, France, and the U.K. In Asia Pacific, the rising demand for gallium nitride devices from emerging nations, such as India and China would aid growth.
Competitive Landscape-
Key Companies Focus on Winning New Contracts to Intensify Competition
The global Gallium Nitride Device Market is highly fragmented with the presence of numerous reputed manufacturers. Most of them are focusing on achieving new contracts from significant governments, as well as private agencies to deliver their in-house products. Below are the two latest industry developments:
June 2020: Raytheon Missiles & Defense provided a contract worth USD 2.3 billion to the U.S. Missile Defense Agency (MDA). The latter will deliver seven GaN-based Army Navy/Transportable Radar Surveillance (AN/TPY-2) units. It is a part of the company’s Terminal High Altitude Area Defense (THAAD) system.
July 2019: Transphorm announced a new contract worth USD 18.5 million from the U.S. Department of Defense (DoD) Office of Naval Research (ONR). It includes a Base Program that is aimed at commercializing nitrogen polar GaN.